RAPID ISOTHERMAL HEATING OF VLSI MOS DEVICES USING A SCANNING E-BEAM SOURCE

被引：0

作者：

RENSCH, DB ^{[1
]}

CHEN, JY ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C325 / C326

页数：2

共 50 条

[1] SIZE EFFECTS IN E-BEAM FABRICATED MOS DEVICES
ELLIOTT, MT
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REEKSTIN, JP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 469 - 475
[2] SIZE EFFECTS IN E-BEAM FABRICATED MOS DEVICES
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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 391 - 397
[3] RAPID E-BEAM HEATING FOR STUDYING METASTABLE TRANSITIONS IN MN
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[J]. JOURNAL OF MATERIALS RESEARCH, 1989, 4 (06) : 1393 - 1397
[4] E-BEAM PROBING FOR VLSI CIRCUIT DEBUG
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[J]. VLSI SYSTEMS DESIGN, 1987, 8 (09): : 24 - &
[5] VLSI LABS UNVEILS LAST E-BEAM UNIT
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[J]. ELECTRONICS, 1980, 53 (08): : 67 - 68
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1654 - 1657
[8] E-BEAM DETECTOR DEVICES FOR IC CONTROLLABILITY
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[9] JOSEPHSON EDGE-JUNCTION DEVICES USING E-BEAM LITHOGRAPHY
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[10] N-CHANNEL MOSFETS FABRICATED IN SILICON-ON-OXIDE USING A SCANNING E-BEAM LINE SOURCE
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