RADIATION EFFECTS IN MOS DEVICES CAUSED BY X-RAY AND E-BEAM LITHOGRAPHY

被引：15
|
作者：
PECKERAR, M [1 ]
FULTON, R [1 ]
BLAISE, P [1 ]
BROWN, D [1 ]
WHITLOCK, R [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 06期
关键词：
D O I：
10.1116/1.570265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1658 / 1661
页数：4
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