INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100)

被引：62

作者：

ABOELFOTOH, MO ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-10044 STOCKHOLM 70,SWEDEN

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5070 / 5078

页数：9

共 50 条

[1] SCHOTTKY-BARRIER BEHAVIOR OF A TI-W ALLOY ON SI(100)
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JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2558 - 2565
[2] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS
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APPLIED PHYSICS LETTERS, 1976, 28 (02) : 97 - 98
[3] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON
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[4] EFFECT OF INTERFACIAL HYDROGEN IN COSI2/SI(100) SCHOTTKY-BARRIER CONTACTS
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[5] THE EFFECT OF AN INTERFACIAL OXIDE LAYER ON THE SCHOTTKY-BARRIER HEIGHT OF ER-SI CONTACT
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[6] INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON THE SCHOTTKY-BARRIER HEIGHT OF SI(111)-PB
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[7] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS
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[8] ORIGIN OF INCREASE IN SCHOTTKY-BARRIER HEIGHT WITH INTERFACIAL OXIDE THICKNESS
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[9] FLUCTUATIONS OF THE AU-SI(100) SCHOTTKY-BARRIER HEIGHT
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[10] INFLUENCE OF INTERFACIAL HYDROGEN AND OXYGEN ON THE SCHOTTKY-BARRIER HEIGHT OF NICKEL ON (111) AND (100) DIAMOND SURFACES
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