Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer

被引：0
|
作者：
Zhen Deng
Zishen Li
Yang Jiang
Ziguang Ma
Yutao Fang
Yangfeng Li
Wenxin Wang
Haiqiang Jia
Hong Chen
机构：
[1] Chinese Academy of Sciences,Beijing National Laboratory for Condensed Matter Physics, Institute of Physics
[2] Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics
[3] Peking University,Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics
来源：
Applied Physics A | 2015年 / 119卷
关键词：
Graphene Layer; Polarization Field; Excitation Power; Internal Quantum Efficiency; Decay Lifetime;
D O I：
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中图分类号：
学科分类号：
摘要：
In this work, a novel hybrid graphene/InGaN-based multiple quantum wells (MQWs) structure has been fabricated. Compared to the sample conventional structure (CS), the utilization of graphene transferred on top GaN layer significantly enhances the internal quantum efficiency and relatively photoluminescence intensity. Furthermore, the excitons in the MQWs of sample hybrid structure (HS) have a shorter decay lifetime of 3.4 ns than that of 6.7 ns for sample CS. These results are probably attributed to the free carriers in the graphene layer, which can screen the piezoelectric field in the active region and thus present a free quantum-confined Stark effect-like behavior. Our work demonstrates that the graphene on the top GaN layer can effectively increase the recombination rate in sample HS, which may further improve LEDs’ performance.
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页码：1209 / 1213
页数：4
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