Microstructure studies of InGaN/GaN multiple quantum wells

被引：0
|
作者：
Lin, YS [1 ]
Hsu, C [1 ]
Ma, KJ [1 ]
Feng, SW [1 ]
Cheng, YC [1 ]
Chung, YY [1 ]
Liu, CW [1 ]
Yang, CC [1 ]
Chyi, JI [1 ]
机构：
[1] Chung Cheng Inst Technol, Dept Mech Engn, Taoyuan, Taiwan
来源：
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST | 2001年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Material microanalyses of InGaN/GaN quantum well structures revealed better confinement of indium-aggregated clusters within wells in samples of lower indium contents and indium-rich precipitates aggregating near V-shape defects.
引用
收藏
页码：218 / 219
页数：2
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