Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures

The effect of irradiation with fast reactor neutrons at an effective energy of 1 MeV and a fluence within Φ = 1 × 1014−5 × 1015 n/cm2 on the photoelectric parameters of p-n-InSe homojunctions obtained in direct optical contact between p- and n-type semiconductors has been studied. The exposure to fast neutrons leads to an increase in the rectification coefficient and the diode ideality factor of the current-voltage characteristics with increasing neutron dose. No significant changes have been observed in the photosensitivity spectra of p-n-InSe structures irradiated to various doses, which allows these structures to be recommended for the creation of radiation-resistant photodetectors.