Effect of electron irradiation attenuated by aluminum screens on the electrical parameters of p-n silicon structures

被引：0

作者：

I. G. Marchenko

N. E. Zhdanovich

机构：

[1] National Academy of Sciences of Belarus,Scientific and Practical Materials Research Center

来源：

Technical Physics Letters | 2010年 / 36卷

关键词：

Technical Physic Letter; Deep Level Transient Spectroscopy; Radiation Defect; Silicon Structure; Reverse Resistance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the influence of irradiation by 6-MeV electrons via flat aluminum screens with thicknesses d = 2−14 mm (mass thicknesses, 0.5–3.8 g/cm2) on the properties of p+-n-n+ silicon structures, including the nonequilibrium charge carrier lifetime (τ), reverse current (IR), and forward current-voltage (I-U) characteristics. In the case of a screen with d = 14 mm (3.8 g/cm2), the irradiated structures exhibit significantly smaller changes in IR values and I-U curves compared to those for d = 2–12 mm, whereas a decrease in τ (from 20 to 1.5 μs) is the same.

引用

页码：464 / 467

页数：3

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