Effect of electron irradiation attenuated by aluminum screens on the electrical parameters of p-n silicon structures

We have studied the influence of irradiation by 6-MeV electrons via flat aluminum screens with thicknesses d = 2−14 mm (mass thicknesses, 0.5–3.8 g/cm2) on the properties of p+-n-n+ silicon structures, including the nonequilibrium charge carrier lifetime (τ), reverse current (IR), and forward current-voltage (I-U) characteristics. In the case of a screen with d = 14 mm (3.8 g/cm2), the irradiated structures exhibit significantly smaller changes in IR values and I-U curves compared to those for d = 2–12 mm, whereas a decrease in τ (from 20 to 1.5 μs) is the same.