EFFECT OF DISLOCATIONS ON STRUCTURE OF DIFFUSED P-N JUNCTIONS IN GALLIUM ARSENIDE AND ON RECOMBINATION RADIATION PARAMETERS

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作者：
OSVENSKI.VB
PROSHKO, GP
MILVIDSK.MG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1967年 / 1卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：755 / &
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