共 50 条
- [1] RECOMBINATION RADIATION OF GALLIUM ANTIMONIDE P-N JUNCTIONS [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (06): : 1538 - &
- [2] EFFECT OF DISLOCATIONS ON STRUCTURE OF DIFFUSED P-N JUNCTIONS IN GALLIUM ARSENIDE AND ON RECOMBINATION RADIATION PARAMETERS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 755 - &
- [3] MECHANISM OF RADIATION RECOMBINATION IN P-N JUNCTIONS IN INDIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 305 - +
- [6] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J]. SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
- [7] COPPER DIFFUSED GALLIUM ARSENIDE P-N JUNCTIONS [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1966, 14 (9-10): : 677 - &
- [8] RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE WITH CURRENT EXCITATION VIA P-N HETEROJUNCTIONS OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 1919 - +
- [9] INVESTIGATION OF NATURE OF LONG-WAVELENGTH BANDS IN RECOMBINATION RADIATION SPECTRA OF DIFFUSED P-N JUNCTIONS IN GALLIUM ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1144 - &