Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water

被引：0

作者：

A. I. Abdulagatov

R. R. Amashaev

Kr. N. Ashurbekova

K. N. Ashurbekova

M. Kh. Rabadanov

I. M. Abdulagatov

机构：

[1] Dagestan State University,

来源：

Russian Journal of General Chemistry | 2018年 / 88卷

关键词：

atomic layer deposition; aluminum nitride; aluminum oxynitride; tris(dimethylamido)aluminum; ammonia;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal deposition temperature 200–230°C). Tris(dimethylamido) aluminum and ammonia were used as precursors for the atomic layer deposition of aluminum nitride (AlN). The average AlN film thickness per ALD cycle (deposition rate) at 200°C was ~0.8 Å. Films were deposited on a silicon <100> substracte with a native oxide layer. The N/Al atomic concentration ratio in the obtained films was ~1.3. Aluminum oxynitride films obtained by periodical dose of water vapor in the course of atomic layer deposition of AlN at 200°C. The composition of the deposited oxynitride films was Al0.5O0.43N0.07.

引用

页码：1699 / 1706

页数：7

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