Atomic Layer Deposition of Aluminum Nitride and Oxynitride on Silicon Using Tris(dimethylamido)aluminum, Ammonia, and Water

被引：0
|
作者：
A. I. Abdulagatov
R. R. Amashaev
Kr. N. Ashurbekova
K. N. Ashurbekova
M. Kh. Rabadanov
I. M. Abdulagatov
机构：
[1] Dagestan State University,
来源：
Russian Journal of General Chemistry | 2018年 / 88卷
关键词：
atomic layer deposition; aluminum nitride; aluminum oxynitride; tris(dimethylamido)aluminum; ammonia;
D O I：
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中图分类号：
学科分类号：
摘要：
Thin films of aluminum nitride and oxynitride were deposited by atomic layer deposition (ALD) in the temperature range from 170 to 290°C (optimal deposition temperature 200–230°C). Tris(dimethylamido) aluminum and ammonia were used as precursors for the atomic layer deposition of aluminum nitride (AlN). The average AlN film thickness per ALD cycle (deposition rate) at 200°C was ~0.8 Å. Films were deposited on a silicon <100> substracte with a native oxide layer. The N/Al atomic concentration ratio in the obtained films was ~1.3. Aluminum oxynitride films obtained by periodical dose of water vapor in the course of atomic layer deposition of AlN at 200°C. The composition of the deposited oxynitride films was Al0.5O0.43N0.07.
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页码：1699 / 1706
页数：7
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