N-type and P-type SnOx thin films based MOX gas sensor testing

被引:0
|
作者
Sidi Mohammed Merah
Yamna Bakha
Abdelkader Djelloul
机构
[1] P-MEMS /DMN,
[2] Centre de Développement des Technologies Avancées (CDTA),undefined
[3] Centre de Recherche en Technologie des Semi-Conducteur pour l’Energétique (CRTSE),undefined
关键词
D O I
暂无
中图分类号
学科分类号
摘要
In this article, n-type and p-type SnOx thin films are deposited using the same precursor with a simple chemical method of spray pyrolysis on the top of the fabricated MOX gas sensor at T = 350 ℃ and 500 ℃ respectively, without any post-deposition annealing step. The deposited films were investigated using the following characterization methods. X-ray diffraction revealed that the deposited n-type SnO2 thin films have a tetragonal rutile structure and in p-type SnO we identified two phases, a tetragonal SnO and orthorhombic SnO. Atomic force microscopy (AFM) indicates that films are homogenous and uniform within a scanned area of 334 nm with a small grain size of 10–15 nm. The performance of the fabricated sensors was performed by electrical characterization and sensing behavior under different concentrations of ethanol C = 7000 ppm, 3500 ppm, 1200 ppm, 600 ppm, and 300 ppm, at an operating temperature Top = 250 ℃ and RH 50%. The evolution under gases showed a higher response for p-type SnO as compared to n-type SnO2.
引用
收藏
相关论文
共 50 条
  • [41] Ohmic contacts to n-type and p-type GaSB
    Subekti, A
    Chin, VWL
    Tansley, TL
    SOLID-STATE ELECTRONICS, 1996, 39 (03) : 329 - 332
  • [42] Ohmic contacts to n-type and p-type ZnSe
    Park, MR
    Anderson, WA
    Jeon, M
    Luo, H
    SOLID-STATE ELECTRONICS, 1999, 43 (01) : 113 - 121
  • [43] Photoinduced p-Type Conductivity in n-Type ZnO
    Zhao, W. X.
    Sun, B.
    Shen, Z.
    Liu, Y. H.
    Chen, P.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (03) : 1003 - 1007
  • [44] CATHODIC POLARIZATION OF N-TYPE AND P-TYPE GERMANIUM
    BATRA, K
    SHARMA, NG
    SINGH, KP
    INDIAN JOURNAL OF TECHNOLOGY, 1985, 23 (11): : 433 - 435
  • [45] OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB
    HEINZ, C
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 54 (02) : 247 - 254
  • [46] N-TYPE CONDUCTION ON P-TYPE GERMANIUM SURFACES
    BROWN, WL
    SHOCKLEY, W
    PHYSICAL REVIEW, 1953, 90 (02): : 336 - 336
  • [47] Characterization of n-Type and p-Type ZnS Thin Layers Grown by an Electrochemical Method
    Echendu, O. K.
    Weerasinghe, A. R.
    Diso, D. G.
    Fauzi, F.
    Dharmadasa, I. M.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (04) : 692 - 700
  • [48] Characterization of n-Type and p-Type ZnS Thin Layers Grown by an Electrochemical Method
    O.K. Echendu
    A.R. Weerasinghe
    D.G. Diso
    F. Fauzi
    I.M. Dharmadasa
    Journal of Electronic Materials, 2013, 42 : 692 - 700
  • [49] Modelling of Gas Sensitivity for P-type Semiconducting Thin Films
    Jaaniso, Raivo
    Kaerkkaenen, Irina
    Floren, Aare
    2010 IEEE SENSORS, 2010, : 1509 - 1512
  • [50] Crystallographic Characteristics and p-Type to n-Type Transition in Epitaxial NiO Thin Film
    Molaei, R.
    Bayati, R.
    Narayan, J.
    CRYSTAL GROWTH & DESIGN, 2013, 13 (12) : 5459 - 5465