Photoinduced p-Type Conductivity in n-Type ZnO

被引：2
|
作者：
Zhao, W. X. [1 ]
Sun, B. [1 ]
Shen, Z. [1 ]
Liu, Y. H. [1 ]
Chen, P. [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 03期
关键词：
n-Type ZnO; photoinduced p-type conductivity; light illumination; capacitance-voltage curves; LIGHT-EMITTING-DIODES; ZINC-OXIDE; FILMS; FABRICATION; SEMICONDUCTORS; HYDROGEN; GA;
D O I：
10.1007/s11664-014-3608-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ag/[BaTiO3/gamma-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance-voltage (C-V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current-voltage (I-V) curves of the [BaTiO3/gamma-Fe2O3]/ZnO thin films display a strong photoconductivity effect.
引用
收藏
页码：1003 / 1007
页数：5
相关论文
共 50 条
  • [1] Photoinduced p-Type Conductivity in n-Type ZnO
    W. X. Zhao
    B. Sun
    Z. Shen
    Y. H. Liu
    P. Chen
    Journal of Electronic Materials, 2015, 44 : 1003 - 1007
  • [2] Persistent n-type photoconductivity in p-type ZnO
    Claflin, B
    Look, DC
    Park, SJ
    Cantwell, G
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) : 16 - 22
  • [3] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
    BROWN, WL
    PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527
  • [4] Properties of p-type and n-type ZnO influenced by P concentration
    Hu, Guangxia
    Gong, Hao
    Chor, E. F.
    Wu, Ping
    APPLIED PHYSICS LETTERS, 2006, 89 (25)
  • [5] Conversion of p-type to n-type conductivity in undoped ZnO films by increasing operating temperature
    Liu, Yanxia
    Zhang, Hongliang
    Zhang, Zhenxing
    Xie, Yizhu
    Xie, Erqing
    APPLIED SURFACE SCIENCE, 2010, 257 (04) : 1236 - 1238
  • [6] Conversion of n-type to p-type conductivity in ZnO by incorporation of Ag and Ag-Li
    Rahman, M.
    Kamruzzaman, M.
    Zapien, J. A.
    Afrose, R.
    Anam, T. K.
    Liton, M. N. H.
    Helal, M. A.
    Khan, M. K. R.
    MATERIALS TODAY COMMUNICATIONS, 2022, 33
  • [7] p-type to n-type conductivity transition in thermoelectric CoSbS
    Kousar, H. Sajida
    Srivastava, Divya
    Karttunen, Antti J.
    Karppinen, Maarit
    Tewari, Girish C.
    APL MATERIALS, 2022, 10 (09)
  • [8] Electrical and optical properties of n-type and p-type ZnO
    Look, DC
    Claflin, B
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2005, 829 : 351 - 359
  • [9] CHAOTIC CONDUCTIVITY OSCILLATION IN N-TYPE AND P-TYPE SI
    YAMADA, K
    KAMATA, N
    FUTAGAWA, H
    MIURA, N
    HAMAGUCHI, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (3B) : B488 - B490
  • [10] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
    KLEIN, DL
    KOLB, GA
    POMPLIANO, LA
    SULLIVAN, MV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
12345