Photoinduced p-Type Conductivity in n-Type ZnO

被引：0
|
作者：
W. X. Zhao
B. Sun
Z. Shen
Y. H. Liu
P. Chen
机构：
[1] Southwest University,School of Physical Science and Technology
来源：
Journal of Electronic Materials | 2015年 / 44卷
关键词：
-Type ZnO; photoinduced ; -type conductivity; light illumination; capacitance–voltage curves;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ag/[BaTiO3/γ-Fe2O3]/ZnO composite films were grown on an n-type silicon (100) single-crystal substrate by magnetron sputtering, and annealed at various temperatures. Capacitance–voltage (C–V) curves show that the capacitance gradually increases with increasing annealed temperature. In addition, ZnO exhibits n-type conductivity in the dark but p-type conductivity under incandescent lamp illumination. The photoinduced p-type conductivity in n-type ZnO should be related to a special n-type ZnO layer originating from high-temperature annealing. The current–voltage (I–V) curves of the [BaTiO3/γ-Fe2O3]/ZnO thin films display a strong photoconductivity effect.
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页码：1003 / 1007
页数：4
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