N-type and P-type SnOx thin films based MOX gas sensor testing

被引:0
|
作者
Sidi Mohammed Merah
Yamna Bakha
Abdelkader Djelloul
机构
[1] P-MEMS /DMN,
[2] Centre de Développement des Technologies Avancées (CDTA),undefined
[3] Centre de Recherche en Technologie des Semi-Conducteur pour l’Energétique (CRTSE),undefined
关键词
D O I
暂无
中图分类号
学科分类号
摘要
In this article, n-type and p-type SnOx thin films are deposited using the same precursor with a simple chemical method of spray pyrolysis on the top of the fabricated MOX gas sensor at T = 350 ℃ and 500 ℃ respectively, without any post-deposition annealing step. The deposited films were investigated using the following characterization methods. X-ray diffraction revealed that the deposited n-type SnO2 thin films have a tetragonal rutile structure and in p-type SnO we identified two phases, a tetragonal SnO and orthorhombic SnO. Atomic force microscopy (AFM) indicates that films are homogenous and uniform within a scanned area of 334 nm with a small grain size of 10–15 nm. The performance of the fabricated sensors was performed by electrical characterization and sensing behavior under different concentrations of ethanol C = 7000 ppm, 3500 ppm, 1200 ppm, 600 ppm, and 300 ppm, at an operating temperature Top = 250 ℃ and RH 50%. The evolution under gases showed a higher response for p-type SnO as compared to n-type SnO2.
引用
收藏
相关论文
共 50 条
  • [31] AN ESTIMATION OF THE IMPURITIES CAUSING N-TYPE TO P-TYPE INVERSION OF CONDUCTION IN THIN INSB FILMS ON MICA SUBSTRATES
    ISAI, M
    OHSHITA, M
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 391 - 393
  • [32] An efficient BTX sensor based on p-type nanoporous titania thin films
    Dutta, K.
    Bhowmik, B.
    Hazra, A.
    Chattopadhyay, P. P.
    Bhattacharyya, P.
    MICROELECTRONICS RELIABILITY, 2015, 55 (3-4) : 558 - 564
  • [33] DIFFERENT P(IN) ANTISITES IN N-TYPE AND P-TYPE INP
    SUN, HJ
    GISLASON, HP
    RONG, CF
    WATKINS, GD
    PHYSICAL REVIEW B, 1993, 48 (23): : 17092 - 17105
  • [34] PdIn contacts to n-type and p-type GaP
    Lin, CF
    Ingerly, DB
    Chang, YA
    APPLIED PHYSICS LETTERS, 1996, 69 (23) : 3543 - 3545
  • [35] THERMOMAGNETIC PROPERTIES OF N-TYPE AND P-TYPE HGTE
    JEDRZEJCZAK, A
    DIETL, T
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (02): : 737 - 751
  • [36] Persistent n-type photoconductivity in p-type ZnO
    Claflin, B
    Look, DC
    Park, SJ
    Cantwell, G
    JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) : 16 - 22
  • [37] PARAMAGNETIC RESONANCE IN N-TYPE AND P-TYPE SILICON
    WILLENBROCK, FK
    BLOEMBERGEN, N
    PHYSICAL REVIEW, 1953, 91 (05): : 1281 - 1281
  • [38] PHOTOELECTROCHEMISTRY OF N-TYPE AND P-TYPE SILICON IN ACETONITRILE
    BYKER, HJ
    WOOD, VE
    AUSTIN, AE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1982 - 1987
  • [39] Photoinduced p-Type Conductivity in n-Type ZnO
    W. X. Zhao
    B. Sun
    Z. Shen
    Y. H. Liu
    P. Chen
    Journal of Electronic Materials, 2015, 44 : 1003 - 1007
  • [40] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
    BROWN, WL
    PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527