Self-assembled InAs/GaAs quantum dots and quantum dot laser

被引：0
|
作者：
Zhanguo Wang
Fengqi Liu
Jiben Liang
Bo Xu
机构：
[1] Chinese Academy of Sciences,Laboratory of Semiconductor Materials Science, Institute of Semiconductors
来源：
Science in China Series A: Mathematics | 2000年 / 43卷
关键词：
quantum dot; spacial ordering; quantum dot laser;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Systematic study of molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs, In-AIAs/AIGaAs/GaAs, and InAs/lnAIAs/lnP quantum dots (QDs) is demonstrated. By adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 1 W is achieved from vertical coupled InAs/GaAs QDs ensemble. The FIT threshold current density is 218 A/cm2. An RT CW output power of 0.53 W ensures at least 3 000 h lasing (only drops 0.83 db). This is one of the best results ever reported.
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页码：861 / 870
页数：9
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