Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities

被引：2
|
作者：
Monte, AFG [1 ]
de Sales, FV
da Silva, SW
Soler, MAG
Cruz, JMR
Morais, PC
da Silva, MJ
Quivy, AA
Leite, JR
机构：
[1] Univ Brasilia, NFA, Inst Fis, BR-70919970 Brasilia, DF, Brazil
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 17卷 / 1-4期
关键词：
quantum dots; carrier diffusion; energy transfer; potential barriers;
D O I：
10.1016/S1386-9477(02)00741-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The carrier dynamics in self-assembled InAs/GaAs quantum dots (QDs) has been investigated as a function of the lateral dot density. We investigated the influence of the QD density on the process of carrier transfer among the QDs. We have found evidence that potential barriers at the wetting layer and dot interfaces are responsible to decrease the carrier capture in low density QDs. This effect can be observed on the increased carrier transport. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：122 / 123
页数：2
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