Volume distribution of InAs/GaAs self-assembled quantum dots

被引：0

作者：

Ebiko, Y ^{[1
]}

Muto, S ^{[1
]}

Itoh, S ^{[1
]}

Suzuki, D ^{[1
]}

Yamakosi, H ^{[1
]}

Shiramine, K ^{[1
]}

Haga, T ^{[1
]}

机构：

[1] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 060, Japan

来源：

COMPOUND SEMICONDUCTORS 1998 | 1999年 / 162期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the scaling law for volume distribution of the self-assembled quantum dots grown by molecular beam epitaxy of Stranski-Krastanow mode, with and without 60 s annealing. The scaling law was found to hold regardless of the annealing time. Also, we found scaling law for the pair distribution of self-assembled quantum dots. Both volume distribution and pair distribution agreed with the scaling functions for 2-Dimensional submonolayer homoepitaxy model with critical cluster size i=1, which excludes adatom detachment from clusters.

引用

页码：445 / 450

页数：6

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