Resistive switching in TiN/HfxAl1 − xOy/HfO2/TiN and TiN/HfO2/Ti/TiN structures

被引：1
|
作者：
Orlov O.M. [1 ,2 ]
Gornev E.S. [1 ,2 ]
Shadrin A.V. [2 ]
Zaitsev S.A. [2 ]
Morozov S.A. [2 ]
Zablotskii A.V. [2 ]
机构：
[1] Scientific Research Institute of Molecular Electronics, Moscow
[2] Moscow Institute of Physics and Technology, Moscow
来源：
Russian Microelectronics | 2014年 / 43卷 / 05期
关键词：
Tin - Titanium nitride - Hafnium oxides - Titanium oxides;
D O I：
10.1134/S1063739714050059
中图分类号：
学科分类号：
摘要：
The memristor metal-oxide-metal structures involving the layers of stoichiometric hafnia and nonstoichiometric hafnia doped with aluminum, as well as the metal-oxide-extracting metal layer structures involving the layers of hafnia and titanium, are fabricated. The oxide layers are coated using the atomic layer deposition. The resistive switching parameters of the structures are determined. © 2014, Pleiades Publishing, Ltd.
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页码：328 / 332
页数：4
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