Schottky Barrier Height at TiN/HfO2 Interface of TiN/HfO2/SiO2/Si Structure

被引：1
|
作者：
Han, K. [1 ]
Wang, X. L. [1 ]
Wang, W. W. [1 ]
Zhang, J. [2 ]
Xiang, J. J. [1 ]
Yang, H. [1 ]
Zhao, C. [1 ]
Chen, D. P. [1 ]
Ye, T. C. [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] North China Univ Technol, Microelectron Dept, Beijing 100041, Peoples R China
来源：
DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期
关键词：
OXIDES; METAL;
D O I：
10.1149/05004.0299ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO2/SiO2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation.
引用
收藏
页码：299 / 304
页数：6
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