Band alignment of HfO2 on SiO2/Si structure

被引：18
|
作者：
Wang, Xiaolei [1 ]
Han, Kai [1 ]
Wang, Wenwu [1 ]
Xiang, Jinjuan [1 ]
Yang, Hong [1 ]
Zhang, Jing [2 ]
Ma, Xueli [1 ]
Zhao, Chao [1 ]
Chen, Dapeng [1 ]
Ye, Tianchun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] N China Univ Technol, Microelect Dept, Beijing 100041, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期
关键词：
D O I：
10.1063/1.3694274
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Band alignment of HfO2 with various thicknesses on SiO2/Si structure is investigated by x-ray photoelectron spectroscopy (XPS). Band bending of HfO2/SiO2/Si system is found to vary with HfO2 thickness. Band alignment of entire HfO2/SiO2/Si is demonstrated using concepts of interfacial or surface gap states and charge neutrality level (CNL). The XPS results are interpreted and attributed to lower CNL of HfO2 than SiO2/Si which induces electron transfer from SiO2/Si to HfO2, resulting in band bending upward for SiO2/Si. These further confirm feasibility of gap state based theory in investigating band alignments of oxide/semiconductor and oxide/oxide interfaces. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694274]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
    Wang, Xiaolei
    Han, Kai
    Wang, Wenwu
    Yang, Hong
    Zhang, Jing
    Ma, Xueli
    Xiang, Jinjuan
    Chen, Dapeng
    Ye, Tianchun
    APPLIED PHYSICS LETTERS, 2012, 100 (10)
  • [2] Interfaces analysis of the HfO2/SiO2/Si structure
    Smirnova, T. P.
    Yakovkina, L. V.
    Beloshapkin, S. A.
    Kaichev, V. V.
    Alferova, N. I.
    Jeong-Hwan, Song
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (05) : 836 - 840
  • [3] Band alignment issues related to HfO2/SiO2/p-Si gate stacks
    Sayan, S
    Emge, T
    Garfunkel, E
    Zhao, XY
    Wielunski, L
    Bartynski, RA
    Vanderbilt, D
    Suehle, JS
    Suzer, S
    Banaszak-Holl, M
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7485 - 7491
  • [4] Effects of aluminum incorporation on band alignment at the SiO2/HfO2 interface
    Sharia, Onise
    Demkov, Alexander A.
    Bersuker, Gennadi
    Lee, B. H.
    PHYSICAL REVIEW B, 2008, 77 (08)
  • [5] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [6] Atomic Level Insight into the Variation and Tunability of Band Alignment between Si and Amorphous SiO2/HfO2
    Li, Wen-Feng
    Liu, Ting-Wei
    Yang, Zheng-Mei
    Wang, Lin-Wang
    Liu, Yue-Yang
    CHINESE PHYSICS LETTERS, 2025, 42 (01)
  • [7] HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Nagashio, Kosuke
    Toriumi, Akira
    THIN SOLID FILMS, 2014, 557 : 272 - 275
  • [8] Schottky Barrier Height at TiN/HfO2 Interface of TiN/HfO2/SiO2/Si Structure
    Han, K.
    Wang, X. L.
    Wang, W. W.
    Zhang, J.
    Xiang, J. J.
    Yang, H.
    Zhao, C.
    Chen, D. P.
    Ye, T. C.
    DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10, 2012, 50 (04): : 299 - 304
  • [9] Modeling HfO2/SiO2/Si interface
    Gavartin, J. L.
    Shluger, A. L.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2412 - 2415
  • [10] TiN/HfO2/SiO2/Si gate stack breakdown:: Contribution of HfO2 and interfacial SiO2 layer
    Rahim, N.
    Misra, D.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (10) : G194 - G198
12345