Band alignment of HfO2 on SiO2/Si structure

被引：18

作者：

Wang, Xiaolei ^{[1
]}

Han, Kai ^{[1
]}

Wang, Wenwu ^{[1
]}

Xiang, Jinjuan ^{[1
]}

Yang, Hong ^{[1
]}

Zhang, Jing ^{[2
]}

Ma, Xueli ^{[1
]}

Zhao, Chao ^{[1
]}

Chen, Dapeng ^{[1
]}

Ye, Tianchun ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] N China Univ Technol, Microelect Dept, Beijing 100041, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

D O I：

10.1063/1.3694274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band alignment of HfO2 with various thicknesses on SiO2/Si structure is investigated by x-ray photoelectron spectroscopy (XPS). Band bending of HfO2/SiO2/Si system is found to vary with HfO2 thickness. Band alignment of entire HfO2/SiO2/Si is demonstrated using concepts of interfacial or surface gap states and charge neutrality level (CNL). The XPS results are interpreted and attributed to lower CNL of HfO2 than SiO2/Si which induces electron transfer from SiO2/Si to HfO2, resulting in band bending upward for SiO2/Si. These further confirm feasibility of gap state based theory in investigating band alignments of oxide/semiconductor and oxide/oxide interfaces. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694274]

引用

页数：4

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