HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks

被引：7
|
作者：
Li, Xiuyan [1 ]
Yajima, Takeaki [1 ]
Nishimura, Tomonori [1 ]
Nagashio, Kosuke [1 ]
Toriumi, Akira [1 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
来源：
THIN SOLID FILMS | 2014年 / 557卷
关键词：
SiO2; reduction; Ultra-high vacuum; SiO desorption; Silicidation; Oxygen vacancies; GATE; DECOMPOSITION; INTERFACE;
D O I：
10.1016/j.tsf.2013.10.142
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high vacuum (UHV) annealing. Along with thin SiO2-IL reduction in UHV, SiO desorption and silicide formation also took place. The thermal desorption spectroscopy and X-ray photoelectron spectroscopy results showed that the SiO2-IL reduction occurred at temperatures lower than the temperature showing SiO desorption and silicidation by accurately controlling the annealing conditions. The mechanism of SiO2-IL reduction can be explained by the oxygen diffusion through oxygen vacancies in HfO2 generated in the gate stack formation and thermal treatment. It is also understandable that the silicidation process is associated with the inhomogeneous SiO desorption. (c) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：272 / 275
页数：4
相关论文
共 50 条
  • [1] Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Nagashio, Kosuke
    Toriumi, Akira
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (18)
  • [2] Diffusion reaction of oxygen in HfO2/SiO2/Si stacks
    Ferrari, S.
    Fanciulli, M.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (30): : 14905 - 14910
  • [3] TiN/HfO2/SiO2/Si gate stack breakdown:: Contribution of HfO2 and interfacial SiO2 layer
    Rahim, N.
    Misra, D.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (10) : G194 - G198
  • [4] Modeling HfO2/SiO2/Si interface
    Gavartin, J. L.
    Shluger, A. L.
    [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2412 - 2415
  • [5] Comparison of the vacuum-ultraviolet radiation response of HfO2/SiO2/Si dielectric stacks with SiO2/Si
    Upadhyaya, G. S.
    Shohet, J. L.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (07)
  • [6] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [7] Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
    Fujimura, Nobuyuki
    Ohta, Akio
    Ikeda, Mitsuhisa
    Makihara, Katsunori
    Miyazaki, Seiichi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (04)
  • [8] Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks
    Li, Xiuyan
    Yajima, Takeaki
    Nishimura, Tomonori
    Toriumi, Akira
    [J]. APPLIED PHYSICS EXPRESS, 2015, 8 (06)
  • [9] Modulation of electron transfer in Si/SiO2/HfO2/Graphene by the HfO2 thickness
    Ben Maad, Y.
    Durnez, A.
    Ajlani, H.
    Madouri, A.
    Oueslati, M.
    Meftah, A.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (09):
  • [10] Modulation of electron transfer in Si/SiO2/HfO2/Graphene by the HfO2 thickness
    Y. Ben Maad
    A. Durnez
    H. Ajlani
    A. Madouri
    M. Oueslati
    A. Meftah
    [J]. Applied Physics A, 2020, 126
12345