Resistive Switching with Bipolar Characteristics in TiN/Ti/HfO2/W Devices

被引：0
|
作者：
Poblador, S. [1 ]
Acero, M. C. [1 ]
Gonzalez, M. B. [1 ]
Campabadal, F. [1 ]
机构：
[1] IMB CNM CSIC, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain
来源：
2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2017年
关键词：
bipolar resistive switching; conductive filament; HfO2; resistive random access memory;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, TiN/Ti/HfO2/W devices have been fabricated and their resistive switching (RS) characteristics have been assessed. The analysis of the obtained results indicates an asymmetric bipolar RS behavior with two very well defined resistance states and good reliability in large sequences of DC voltage sweep and pulse-train cycles.
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页数：4
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