Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks

被引：6
|
作者：
Vinuesa, Guillermo [1 ]
Garcia, Hector [1 ]
Gonzalez, Mireia B. [2 ]
Kalam, Kristjan [3 ]
Zabala, Miguel [2 ]
Tarre, Aivar [3 ]
Kukli, Kaupo [3 ]
Tamm, Aile [3 ]
Campabadal, Francesca [2 ]
Jimenez, Juan [4 ]
Castan, Helena [1 ]
Duenas, Salvador [1 ]
机构：
[1] Univ Valladolid, Dept Elect, Paseo Belen 15, Valladolid 47011, Spain
[2] IMB CNM CSIC, Inst Microelect Barcelona, Campus UAB, Bellaterra 08193, Spain
[3] Univ Tartu, Inst Phys, W Ostwaldi 1, EE-50411 Tartu, Estonia
[4] Univ Valladolid, Dept Condensed Matter Phys, GdS Optronlab, LUCIA Bldg, Paseo Belen 19, Valladolid 47011, Spain
来源：
ELECTRONICS | 2022年 / 11卷 / 03期
关键词：
resistive switching; thickness dependence; conductive filaments; RRAM; polarity change; hafnium oxide; ATOMIC LAYER DEPOSITION; TIN; UNIPOLAR; DEVICES;
D O I：
10.3390/electronics11030479
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity was observed in TiN/Ti/HfO2/Pt structures as the sign of the voltages at which SET and RESET occur depended on the film thickness. A thorough revision of the previous literature on bipolar resistive switching polarity changes is made in order to condense previous knowledge of the subject in a brief and comprehensible way and explain the experimental measurements. The different resistive switching polarities occur in a similar voltage range, which is a new finding when compared to precedent research on the subject. A hypothesis is proposed to explain the change in resistive switching polarity, based on the assumption that polarity change is due to filament disruption occurring at different interfaces.
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页数：9
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