Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device

被引：1
|
作者：
Ding, Xiangxiang [1 ]
Liu, Lifeng [1 ]
Feng, Yulin [1 ]
Huang, Peng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.23919/snw.2019.8782976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, TiN/TiOx/HfO2/Pt resistive random access memory (RRAM) devices with different TiOx film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiOx film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiOx film under pulse measurement shows as fast as 2Ons pulse width and can be cycled for 1e6 cy.
引用
收藏
页码：67 / 68
页数：2
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