Effect of TiOx Film Thickness on Resistive Switching Behavior of TiN/TiOx/HfO2/Pt RRAM Device

被引：1
|
作者：
Ding, Xiangxiang [1 ]
Liu, Lifeng [1 ]
Feng, Yulin [1 ]
Huang, Peng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) | 2019年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.23919/snw.2019.8782976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, TiN/TiOx/HfO2/Pt resistive random access memory (RRAM) devices with different TiOx film thickness were fabricated. The distributions of cycle-to-cycle and device-to-device showed that the RRAM devices with thick TiOx film performed high ratio and small switching voltage. Besides, the RRAM device with thick TiOx film under pulse measurement shows as fast as 2Ons pulse width and can be cycled for 1e6 cy.
引用
收藏
页码：67 / 68
页数：2
相关论文
共 50 条
  • [21] Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames
    Kim, Joo Hyung
    Bae, Yoon Cheol
    Lee, Ah Rahm
    Baek, Kwang Ho
    Hong, Jin Pyo
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (03)
  • [22] FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope
    Zintler, A.
    Kunz, U.
    Pivak, Y.
    Sharath, S. U.
    Vogel, S.
    Hildebrandt, E.
    Kleebe, H. -J.
    Alff, L.
    Molina-Luna, L.
    [J]. ULTRAMICROSCOPY, 2017, 181 : 144 - 149
  • [23] Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device
    Ryu, Hojeong
    Jung, Hoeje
    Lee, Kisong
    Kim, Sungjun
    [J]. METALS, 2021, 11 (12)
  • [24] Resistive switching behavior of HfO2 film with different Ti doping concentrations
    Guo, Tingting
    Tan, Tingting
    Liu, Zhengtang
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (04)
  • [25] Large resistive switching in Pt/BNT/HfO2/Pt capacitors
    Song, H. J.
    Wang, J. B.
    Zhong, X. L.
    Cheng, J. J.
    Zhong, G. K.
    [J]. RSC ADVANCES, 2014, 4 (92) : 50891 - 50896
  • [26] Effect of Doping Different Cu Valence States in HfO2 on Resistive Switching Properties of RRAM
    Yang, Jin
    Chen, Jun
    Hong, Yingzheng
    [J]. INORGANICS, 2022, 10 (06)
  • [27] Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure
    Jana, Debanjan
    Samanta, Subhranu
    Roy, Sourav
    Lin, Yu Feng
    Maikap, Siddheswar
    [J]. NANO-MICRO LETTERS, 2015, 7 (04) : 392 - 399
  • [28] Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure
    Debanjan Jana
    Subhranu Samanta
    Sourav Roy
    Yu Feng Lin
    Siddheswar Maikap
    [J]. Nano-Micro Letters, 2015, 7 : 392 - 399
  • [29] Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure
    Debanjan Jana
    Subhranu Samanta
    Sourav Roy
    Yu Feng Lin
    Siddheswar Maikap
    [J]. Nano-Micro Letters, 2015, 7 (04) : 392 - 399
  • [30] Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO2/Ti/Pt device
    焦金龙
    甘秋宏
    程实
    廖晔
    柯少颖
    黄巍
    汪建元
    李成
    陈松岩
    [J]. Chinese Physics B, 2021, 30 (11) : 668 - 672
12345