The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

被引：0
|
作者：
A. E. Abdikarimov
机构：
[1] Urgench State University,
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
random telegraph noise; finned (vertical) field-effect transistor; interface trap charge; drain current density.;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：494 / 496
页数：2
相关论文
共 40 条
  • [21] Influence of localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs
    Kumar, Sanjay
    Baral, Kamlaksha
    Chander, Sweta
    Singh, P. K.
    Singh, Kunal
    Jit, Satyabrata
    2018 3RD INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT), 2018,
  • [22] Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories
    Jeon, Kichan
    Lee, Sunyeong
    Kim, Dong Myong
    Kim, Dae Hwan
    SOLID-STATE ELECTRONICS, 2010, 54 (05) : 557 - 563
  • [23] Influence of travelling magnetic fields on S-L interface shapes of materials with different electrical conductivities
    Dropka, N.
    Frank-Rotsch, Ch.
    Miller, W.
    Rudolph, P.
    JOURNAL OF CRYSTAL GROWTH, 2012, 338 (01) : 208 - 213
  • [24] Numerical Investigation into the Thermal Performance of Single Microchannels with Varying Axial Length and Different Shapes of Micro Pin-Fin Inserts
    Adewumi, Olayinka O.
    Bello-Ochende, Tunde
    Meyer, Josua P.
    HEAT TRANSFER ENGINEERING, 2017, 38 (13) : 1157 - 1170
  • [25] Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
    He, Hongyu
    Liu, Yuan
    Yan, Binghui
    Lin, Xinnan
    Zheng, Xueren
    Zhang, Shengdong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (11) : 4423 - 4431
  • [26] Influence of different beam shapes on melt pool geometry of single melt tracks on IN718
    Stoll, Thomas
    Prudlik, Robin
    Birg, Markus
    Wudy, Katrin
    PROGRESS IN ADDITIVE MANUFACTURING, 2025, 10 (04) : 2675 - 2690
  • [27] Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States
    He, Hongyu
    Liu, Yuan
    Yan, Binghui
    Lin, Xinnan
    Zheng, Xueren
    Zhang, Shengdong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3654 - 3660
  • [28] Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels
    Matsukawa, Takashi
    Liu, Yongxun
    Endo, Kazuhiko
    Tsukada, Junichi
    Yamauchi, Hiromi
    Ishikawa, Yuki
    O'uchi, Shinichi
    Mizubayashi, Wataru
    Ota, Hiroyuki
    Migita, Shinji
    Morita, Yukinori
    Masahara, Meishoku
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)
  • [29] Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels
    Matsukawa, Takashi
    Liu, Yongxun
    Endo, Kazuhiko
    Tsukada, Junichi
    Yamauchi, Hiromi
    Ishikawa, Yuki
    O'uchi, Shinichi
    Mizubayashi, Wataru
    Ota, Hiroyuki
    Migita, Shinji
    Morita, Yukinori
    Masahara, Meishoku
    Japanese Journal of Applied Physics, 2014, 53 (4 SPEC. ISSUE)
  • [30] A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides
    Ahmed, K
    Wortman, JJ
    Hauser, JR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) : 2236 - 2237
1234