The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

被引：0
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作者：
A. E. Abdikarimov
机构：
[1] Urgench State University,
来源：
Technical Physics Letters | 2020年 / 46卷
关键词：
random telegraph noise; finned (vertical) field-effect transistor; interface trap charge; drain current density.;
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摘要：
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页码：494 / 496
页数：2
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