A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

Based on two-dimensiona (2-D) numerical simulation, a pulsed-drain current (PDC) measurement technique in weak inversion is investigated as an alternative to the standard charge- pumping technique for the extraction of interface trap density using small geometry MOSFETs, The PDC technique was found particularly useful for small MOSFETs with sub-20 Angstrom oxides to avoid high gate tunneling current effects. The numerical simulation results are in excellent agreement with the simple analytical expressions used in the PDC technique.