Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range

被引:0
|
作者
N. N. Zinov’ev
A. V. Andrianov
V. Yu. Nekrasov
L. V. Belyakov
O. M. Sreseli
G. Hill
J. M. Chamberlain
机构
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] University of Sheffield,Department of Electronic and Electrical Engineering
[3] University of Leeds,IMP, School of Electronic and Electrical Engineering
来源
Semiconductors | 2002年 / 36卷
关键词
Magnetic Material; Electron Transition; Emission Band; Electromagnetism; Quantum Well;
D O I
暂无
中图分类号
学科分类号
摘要
Electroluminescence from a quantum-cascade structure comprising 40 periods of GaAs/Al0.15Ga0.85As tunnel-coupled quantum wells (QW) was studied. A terahertz emission band in the range 1.0–1.8 THz is observed under bias exceeding 1.5–2.0 V. The emission band peak shifts linearly to higher frequency with the increasing bias. The effect is accounted for by spatially indirect electron transitions between states in the neighboring QWs.
引用
收藏
页码:226 / 229
页数:3
相关论文
共 50 条
  • [1] Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range
    Zinov'ev, NN
    Andrianov, AV
    Nekrasov, VY
    Belyakov, LV
    Sreseli, OM
    Hill, G
    Chamberlain, JM
    [J]. SEMICONDUCTORS, 2002, 36 (02) : 226 - 229
  • [2] Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures
    N. N. Zinov’ev
    A. V. Andrianov
    V. Yu. Nekrasov
    V. A. Petrovskii
    L. V. Belyakov
    O. M. Sreseli
    G. Hill
    J. M. Chamberlain
    [J]. Journal of Experimental and Theoretical Physics Letters, 2001, 74 : 100 - 102
  • [3] Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures
    Zinov'ev, NN
    Andrianov, AV
    Nekrasov, VY
    Petrovskii, VA
    Belyakov, LV
    Sreseli, OM
    Hill, G
    Chamberlain, JM
    [J]. JETP LETTERS, 2001, 74 (02) : 100 - 102
  • [4] Processing of AlGaAs/GaAs quantum-cascade structures for terahertz laser
    Szerling, Anna
    Kosiel, Kamil
    Szymanski, Michal
    Wasilewski, Zbig
    Golaszewska, Krystyna
    Laszcz, Adam
    Pluska, Mariusz
    Trajnerowicz, Artur
    Sakowicz, Maciej
    Walczakowski, Michal
    Palka, Norbert
    Jakiela, Rafal
    Piotrowska, Anna
    [J]. JOURNAL OF NANOPHOTONICS, 2015, 9
  • [5] Terahertz electroluminescence originating from spatially indirect intersubband transitions in a GaAs/AlGaAs quantum-cascade structure
    Glinskii, GF
    Andrianov, AV
    Sreseli, OM
    Zinov'ev, NN
    [J]. SEMICONDUCTORS, 2005, 39 (10) : 1182 - 1187
  • [6] Terahertz electroluminescence originating from spatially indirect intersubband transitions in a GaAs/AlGaAs quantum-cascade structure
    G. F. Glinskii
    A. V. Andrianov
    O. M. Sreseli
    N. N. Zinov’ev
    [J]. Semiconductors, 2005, 39 : 1182 - 1187
  • [7] Quantum cascade electroluminescence in GaAs/AlGaAs structures
    Kruck, P
    Strasser, G
    Helm, M
    Hvozdara, L
    Gornik, E
    [J]. PHYSICA E, 1998, 2 (1-4): : 449 - 452
  • [8] Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures
    Li, YB
    Cockburn, JW
    Skolnick, MS
    Birkett, MJ
    Duck, JP
    Grey, R
    Hill, G
    [J]. ELECTRONICS LETTERS, 1997, 33 (22) : 1874 - 1875
  • [9] Intersubband electroluminescence from GaAs AlGaAs triple barrier and quantum cascade structures
    Li, YB
    Cockburn, JW
    Skolnick, MS
    Duck, JP
    Birkett, MJ
    Wilson, LR
    Grey, R
    Hill, G
    [J]. INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES, 1998, : 37 - 42
  • [10] Terahertz GaAs/AlAs quantum-cascade lasers
    Schrottke, L.
    Lue, X.
    Rozas, G.
    Biermann, K.
    Grahn, H. T.
    [J]. APPLIED PHYSICS LETTERS, 2016, 108 (10)