Processing of AlGaAs/GaAs quantum-cascade structures for terahertz laser

We report research results with regard to AlGaAs/GaAs structure processing for THz quantum-cascade lasers (QCLs). We focus on the processes of Ti/Au cladding fabrication for metal-metal waveguides and wafer bonding with indium solder. Particular emphasis is placed on optimization of technological parameters for the said processes that result in working devices. A wide range of technological parameters was studied using test structures and the analysis of their electrical, optical, chemical, and mechanical properties performed by electron microscopic techniques, energy dispersive x-ray spectrometry, secondary ion mass spectroscopy, atomic force microscopy, Fourier-transform infrared spectroscopy, and circular transmission line method. On that basis, a set of technological parameters was selected for the fabrication of devices lasing at a maximum temperature of 130 K from AlGaAs/GaAs structures grown by means of molecular beam epitaxy. Their resulting threshold-current densities were on a level of 1.5 kA/cm(2). Furthermore, initial stage research regarding fabrication of Cu-based claddings is reported as these are theoretically more promising than the Au-based ones with regard to low-loss waveguide fabrication for THz QCLs. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)