Terahertz GaAs/AlAs quantum-cascade lasers

被引:58
|
作者
Schrottke, L. [1 ]
Lue, X. [1 ]
Rozas, G. [1 ]
Biermann, K. [1 ]
Grahn, H. T. [1 ]
机构
[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany
关键词
ALAS/GAAS; ALLOYS;
D O I
10.1063/1.4943657
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have realized GaAs/AlAs quantum-cascade lasers operating at 4.75 THz exhibiting more than three times higher wall plug efficiencies than GaAs/Al0.25Ga0.75As lasers with an almost identical design. At the same time, the threshold current density at 10K is reduced from about 350 A/cm(2) for the GaAs/Al0.25Ga0.75As laser to about 120 A/cm(2) for the GaAs/AlAs laser. Substituting AlAs for Al0.25Ga0.75As barriers leads to a larger energy separation between the subbands reducing the probability for leakage currents through parasitic states and for reabsorption of the laser light. The higher barriers allow for a shift of the quasi-continuum of states to much higher energies. The use of a binary barrier material may also reduce detrimental effects due to the expected composition fluctuations in ternary alloys. (C) 2016 AIP Publishing LLC.
引用
收藏
页数:5
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