Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

被引：0
|
作者：
T. Sameshima
K. Motai
N. Andoh
机构：
[1] Tokyo University of Agriculture and Technology,
来源：
Applied Physics A | 2004年 / 79卷
关键词：
Silicon; Crystallization; Thin Film; Energy Density; Optimum Condition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Polycrystalline thin film transistors (poly-Si TFTs) were fabricated using the 5-μs-rapid joule heating method. The optimum condition of 0.77 J/cm2 for crystallization was determined through analysis of transfer characteristics of poly-Si TFTs. The density of the tail-type defect states decreased from 1.4×1012 to 9.5×1011 cm-2 and the carrier mobility increased from 300 cm2/Vs to 760 cm2/Vs as the joule heating energy density increased from 0.68 to 0.77 J/cm2. The threshold voltage of the drain current ranged between 0.9 and 1.15 V.
引用
收藏
页码：599 / 603
页数：4
相关论文
共 50 条
  • [41] Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD
    Zhao, YW
    Li, ZM
    He, SQ
    Liao, XB
    Sheng, SR
    Deng, LS
    Ma, ZX
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 48 (1-4) : 321 - 326
  • [42] Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films
    Kouvatsos, Dimitrios N.
    Farmakis, Filippos V.
    Moschou, Despina C.
    Kontogiannopoulos, Giannis P.
    Papaioannou, George J.
    Voutsas, Apostolos T.
    SOLID-STATE ELECTRONICS, 2007, 51 (06) : 936 - 940
  • [43] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS
    KAMINS, TI
    MARCOUX
    ELECTRON DEVICE LETTERS, 1980, 1 (08): : 159 - 161
  • [44] Pulsed laser-enduced electrical-current joule heating for crystallization of silicon thin films
    Andoh, N
    Sameshima, T
    FIFTH INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION, 2004, 5662 : 464 - 469
  • [45] Effect of halogen on the structure of tow temperature polycrystalline silicon thin films fabricated on glass substrates
    Kamiya, T
    Maeda, Y
    Nakahata, K
    Komaru, T
    Fortmann, CM
    Shimizu, I
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1999, 107 (11) : 1099 - 1104
  • [46] Modelling the generation of Joule heating in defective thin oxide films
    Haris, Ackar
    Iris, Kico
    Anel, Tahirbegovic
    Adnan, Mehonic
    Senad, Huseinbegovic
    2016 INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (INDEL), 2016,
  • [47] Effect of halogen on the structure of low temperature polycrystalline silicon thin films fabricated on glass substrates
    Kamiya, Toshio
    Maeda, Yoshiteru
    Nakahata, Kouichi
    Komaru, Takashi
    Fortmann, Charles M.
    Shimizu, Isamu
    Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, 1999, 107 (1251): : 1099 - 1104
  • [48] Comparative study of rapid and classical thermal phosphorus diffusion on polycrystalline silicon thin films
    Bourdais, S
    Beaucarne, G
    Slaoui, A
    Poortmans, J
    Semmache, B
    Dubois, C
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) : 487 - 493
  • [49] Deposition and characterization of polycrystalline silicon films on glass for thin film solar cells
    Bergmann, RB
    Krinke, J
    Strunk, HP
    Werner, JH
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 325 - 330
  • [50] EXPERIMENTAL CHARACTERIZATION OF ELECTRICAL CONDUCTION IN UNDOPED POLYCRYSTALLINE SILICON THIN FILMS.
    Kim, Dae M.
    Qian, Feng
    Ahmed, S.S.
    Park, H.K.
    Sachitano, J.L.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 863 - 867
12345