Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

Polycrystalline thin film transistors (poly-Si TFTs) were fabricated using the 5-μs-rapid joule heating method. The optimum condition of 0.77 J/cm2 for crystallization was determined through analysis of transfer characteristics of poly-Si TFTs. The density of the tail-type defect states decreased from 1.4×1012 to 9.5×1011 cm-2 and the carrier mobility increased from 300 cm2/Vs to 760 cm2/Vs as the joule heating energy density increased from 0.68 to 0.77 J/cm2. The threshold voltage of the drain current ranged between 0.9 and 1.15 V.