Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

被引：0
|
作者：
T. Sameshima
K. Motai
N. Andoh
机构：
[1] Tokyo University of Agriculture and Technology,
来源：
Applied Physics A | 2004年 / 79卷
关键词：
Silicon; Crystallization; Thin Film; Energy Density; Optimum Condition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Polycrystalline thin film transistors (poly-Si TFTs) were fabricated using the 5-μs-rapid joule heating method. The optimum condition of 0.77 J/cm2 for crystallization was determined through analysis of transfer characteristics of poly-Si TFTs. The density of the tail-type defect states decreased from 1.4×1012 to 9.5×1011 cm-2 and the carrier mobility increased from 300 cm2/Vs to 760 cm2/Vs as the joule heating energy density increased from 0.68 to 0.77 J/cm2. The threshold voltage of the drain current ranged between 0.9 and 1.15 V.
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页码：599 / 603
页数：4
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