Mechanical strengthening of Si cantilevers by chemical wet etching

被引:0
|
作者
Mitsuhiro Shikida
Tatsuya Hasegawa
Kayo Hamaguchi
Kazuo Sato
机构
[1] Nagoya University,Center for Micro
[2] Nagoya University,Nano Mechatronics
[3] Nagoya University,Department of Mechanical Engineering
来源
Microsystem Technologies | 2013年 / 19卷
关键词
Fracture Strength; Chemical Etching; Increment Ratio; Bosch Process; Fracture Configuration;
D O I
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中图分类号
学科分类号
摘要
Improvement of the mechanical strength of Si structures by applying chemical wet etching was investigated. The cantilever specimens that have a sidewall surface of Si{110} were produced by a Bosch process with a resist mask. The typical height and pitch of the scalloping formed on the sidewall were 245 and 891 nm, respectively. To improve mechanical strength of the cantilever, 50 % KOH (40 °C) chemical wet etching was applied to reduce the scalloping. The cantilevers with and without chemical etching applied were bent laterally by using a manipulator under an optical microscope. The maximum stresses in the cantilever at the fracture were increased by applying chemical etching. The increment ratio of the stress in Si{110} specimens was 1.7–1.8 times. Cantilevers with and without chemical etching applied showed no big differences in terms of the fracture configurations.
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页码:547 / 553
页数:6
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