Mechanical strengthening of Si cantilevers by chemical wet etching

被引:0
|
作者
Mitsuhiro Shikida
Tatsuya Hasegawa
Kayo Hamaguchi
Kazuo Sato
机构
[1] Nagoya University,Center for Micro
[2] Nagoya University,Nano Mechatronics
[3] Nagoya University,Department of Mechanical Engineering
来源
Microsystem Technologies | 2013年 / 19卷
关键词
Fracture Strength; Chemical Etching; Increment Ratio; Bosch Process; Fracture Configuration;
D O I
暂无
中图分类号
学科分类号
摘要
Improvement of the mechanical strength of Si structures by applying chemical wet etching was investigated. The cantilever specimens that have a sidewall surface of Si{110} were produced by a Bosch process with a resist mask. The typical height and pitch of the scalloping formed on the sidewall were 245 and 891 nm, respectively. To improve mechanical strength of the cantilever, 50 % KOH (40 °C) chemical wet etching was applied to reduce the scalloping. The cantilevers with and without chemical etching applied were bent laterally by using a manipulator under an optical microscope. The maximum stresses in the cantilever at the fracture were increased by applying chemical etching. The increment ratio of the stress in Si{110} specimens was 1.7–1.8 times. Cantilevers with and without chemical etching applied showed no big differences in terms of the fracture configurations.
引用
收藏
页码:547 / 553
页数:6
相关论文
共 50 条
  • [31] Wet chemical etching of AlN single crystals
    Zhuang, D
    Edgar, JH
    Liu, LH
    Liu, B
    Walker, L
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2002, 7 (04):
  • [32] Wet chemical etching of AIN in KOH solution
    Cimalla, I.
    Foerster, Ch.
    Cimalla, V.
    Lebedev, V.
    Cengher, D.
    Ambacher, O.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1767 - 1770
  • [33] Numerical simulation of wet-chemical etching
    Driesen, CH
    Kuerten, JGM
    Kuiken, HK
    Zandbergen, PJ
    SIXTEENTH INTERNATIONAL CONFERENCE ON NUMERICAL METHODS IN FLUID DYNAMICS, 1998, 515 : 470 - 475
  • [34] A Study on the Removal Method of Si Residue during Si Wet Etching
    Ko, Kihyung
    Jeon, Hayoung
    Song, Myunggeun
    Han, Jeongnam
    Yoon, Boun
    Choi, Siyoung
    Kang, Hokyu
    Lee, Chilgi
    Kim, Taesung
    SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY 13 (SCST 13), 2013, 58 (06): : 57 - 61
  • [35] Texturing of multicrystalline silicon with acidic wet chemical etching and plasma etching
    Schultz, O
    Emanuel, G
    Glunz, SW
    Willeke, GP
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1360 - 1363
  • [36] Analysis of Si Wet Etching Effect on Wafer Edge
    Saito, Suguru
    Okuyama, Atsushi
    Takeo, Kenji
    Hagimoto, Yoshiya
    Iwamoto, Hayato
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII, 2016, 255 : 97 - 101
  • [37] Forming Si nanocrystals on insulator by wet anisotropic etching
    Zrir, M. A.
    Kakhia, M.
    AlKafri, N.
    THIN SOLID FILMS, 2020, 696
  • [38] The surf ace topography of GaN grown on Si(111) substrate before and after wet chemical etching
    Zhao, Liwei
    Liu, Caichi
    Teng, Xiaoyun
    Sun, Shilong
    Zhang, Wei
    Zhu, Junshan
    Feng, Yuchun
    Guo, Baoping
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 403 - 406
  • [39] New trends in the preparation of high-performance Au/B-Si photodetector by wet chemical etching: the effect of etching time
    Abdulhameed, Abdullah S.
    Hadi, Hasan A.
    Ismail, Raid A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2024, 35 (10)
  • [40] New trends in the preparation of high-performance Au/B-Si photodetector by wet chemical etching: the effect of etching time
    Abdullah S. Abdulhameed
    Hasan A. Hadi
    Raid A. Ismail
    Journal of Materials Science: Materials in Electronics, 2024, 35