Fully on-chip switched capacitor NMOS low dropout voltage regulator

被引：0

作者：

Daniel Camacho

Ping Gui

Paulo Moreira

机构：

[1] Southern Methodist University,Department of Electrical Engineering

[2] CERN,undefined

来源：

Analog Integrated Circuits and Signal Processing | 2010年 / 65卷

关键词：

Gate overdrive; Low dropout voltage (LDO) regulator; NMOS pass transistor; Voltage control;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 μs. It is designed in a 0.13 μm CMOS process with an area of 0.008 mm2 and its operation does not require any external component.

引用

页码：141 / 149

页数：8

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