Development of semiconductor detectors based on wide-gap materials

被引：0
|
作者：
V. M. Zaletin
机构：
[1] Institute for Physicotechnical Problems.,
来源：
Atomic Energy | 2004年 / 97卷
关键词：
GaAs; Field Condition; Individual Sample; Experimental Batch; Promising Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The properties of promising materials for uncooled semiconductor x- and γ-ray detectors are examined. Work being performed in this field in our country is briefly described. The spectrometric parameters of detectors based on CdTe, GaAs, HgI2 , and TlBr crystals are presented. Small, according to sensitivity, detectors based on Cdx Zn1-x Te and HgI2 have the best room-temperature resolution. Individual samples and experimental batches of such detectors have been tested and used under industrial and field conditions. The results obtained with TlBr crystals are interesting.
引用
收藏
页码：773 / 780
页数：7
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