Development of semiconductor detectors based on wide-gap materials

被引:0
|
作者
V. M. Zaletin
机构
[1] Institute for Physicotechnical Problems.,
来源
Atomic Energy | 2004年 / 97卷
关键词
GaAs; Field Condition; Individual Sample; Experimental Batch; Promising Material;
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中图分类号
学科分类号
摘要
The properties of promising materials for uncooled semiconductor x- and γ-ray detectors are examined. Work being performed in this field in our country is briefly described. The spectrometric parameters of detectors based on CdTe, GaAs, HgI2 , and TlBr crystals are presented. Small, according to sensitivity, detectors based on Cdx Zn1-x Te and HgI2 have the best room-temperature resolution. Individual samples and experimental batches of such detectors have been tested and used under industrial and field conditions. The results obtained with TlBr crystals are interesting.
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页码:773 / 780
页数:7
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