Development of semiconductor detectors based on wide-gap materials

被引：0
|
作者：
V. M. Zaletin
机构：
[1] Institute for Physicotechnical Problems.,
来源：
Atomic Energy | 2004年 / 97卷
关键词：
GaAs; Field Condition; Individual Sample; Experimental Batch; Promising Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The properties of promising materials for uncooled semiconductor x- and γ-ray detectors are examined. Work being performed in this field in our country is briefly described. The spectrometric parameters of detectors based on CdTe, GaAs, HgI2 , and TlBr crystals are presented. Small, according to sensitivity, detectors based on Cdx Zn1-x Te and HgI2 have the best room-temperature resolution. Individual samples and experimental batches of such detectors have been tested and used under industrial and field conditions. The results obtained with TlBr crystals are interesting.
引用
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页码：773 / 780
页数：7
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