Spectroscopy of single InAs quantum dots

被引：0

作者：

Gaisler A.V. ^{[1
]}

Jaroshevich A.S. ^{[1
]}

Derebezov I.A. ^{[1
]}

Kalagin A.K. ^{[1
]}

Bakarov A.K. ^{[1
]}

Toropov A.I. ^{[1
]}

Shcheglov D.V. ^{[1
]}

Gaisler V.A. ^{[1
]}

Latyshev A.V. ^{[1
]}

Aseev A.L. ^{[1
]}

机构：

[1] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk

来源：

Optoelectronics, Instrumentation and Data Processing | 2013年 / 49卷 / 05期

关键词：

biexciton; emitters of entangled photon pairs; exciton; fine structure; semiconductor quantum dots; single photon emitter;

D O I：

10.3103/S8756699013050117

中图分类号：

学科分类号：

摘要：

Ensembles of InAs quantum dots with a very low density (~106 cm-2) are grown by molecular beam epitaxy, which allows the spectral characteristics of emission of single quantum dots to be studied by the method of cryogenic microphotoluminescence. With increasing quantum dot size, the splitting of exciton states is demonstrated to increase steadily to ~102 μeV. In the exciton energy range of 1.3-1.4 eV, the magnitude of this splitting is comparable with the natural width of the exciton lines. This result is important for the development of emitters of entangled photon pairs based on InAs quantum dots. © 2013 Allerton Press, Inc.

引用

页码：498 / 503

页数：5

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