InAs/InP quantum dots:: from single to coupled dots applications

被引：1
|
作者：
Cornet, C. [1 ]
Schliwa, A. [2 ]
Hayne, M. [3 ]
Chauvin, N. [4 ]
Dore, F.
Even, J. [2 ]
Moshchalkov, V. V.
Bimberg, D. [2 ]
Bremond, G.
Bru-Chevallier, C. [4 ]
Gendry, M. [5 ]
Loualiche, S.
机构：
[1] INSA Rennes, CNRS, UMR 6082 FOTON, LENS, 20 Ave Buttes Coesmes, F-35043 Rennes, France
[2] Tech Univ berlin, Inst Feskoperphys, BR-10623 Berlin, Germany
[3] Katholieke Univ Leuven, Pulsed Fields Grp, INPAC, B-3001 Heverlee, Belgium
[4] Inst Natl Sci Appl, CNRS, LPM, UMR 5511, F-69621 Villeurbanne, France
[5] Ecole Cent Lyon, CNRS, LEOM, UMR 5512, F-69134 Ecully, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期
关键词：
D O I：
10.1002/pssc.200671623
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k-p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. A configuration interaction model is used to determine few-particle states of these dots and a comparison with micro-photoluminescence experiments on single InAs/InP QDs is made. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4039 / +
页数：2
相关论文
共 50 条
  • [1] Single photon sources using InAs/InP quantum dots
    Hostein, R.
    Gogneau, N.
    Michon, A.
    Le Gratiet, L.
    Cambril, E.
    Beaudoin, G.
    Patriarche, G.
    Robert-Philip, I.
    Marzin, J. Y.
    Beveratos, A.
    Sagnes, I.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES VI, 2009, 7222
  • [2] InAs/InP quantum dots (QD):: From fundamental understanding to coupled QD 1.55 μm laser applications
    Cornet, C.
    Hayne, M.
    Schliwa, A.
    Dore, F.
    Even, J.
    Bimberg, D.
    Moshchalkov, V. V.
    Loualiche, S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 458 - +
  • [3] Wavelength controlled InAs/InP quantum dots for telecom laser applications
    Anantathanasarn, S.
    Notzel, R.
    van Veldhoven, P. J.
    van Otten, F. W. M.
    Barbarin, Y.
    Servanton, G.
    de Vries, T.
    Smalbrugge, E.
    Geluk, E. J.
    Eijkemans, T. J.
    Bente, E. A. J. M.
    Oei, Y. S.
    Smit, M. K.
    Wolter, J. H.
    MICROELECTRONICS JOURNAL, 2006, 37 (12) : 1461 - 1467
  • [4] Photonic switching in InAs/InP quantum dots
    Haverkort, JEM
    Prasanth, R
    Dilna, S
    Bogaart, EW
    van der Tol, JJGM
    Patent, EA
    Zhao, G
    Gong, Q
    van Veldhoven, PJ
    Nötzel, R
    Wolter, JH
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 86 - 88
  • [5] Carrier capture in InAs/InP quantum dots
    Hinooda, SI
    Paillard, M
    Loualiche, S
    Marie, X
    Lambert, B
    Bertru, N
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1291 - 1292
  • [6] Excitons in InP/InAs inhomogeneous quantum dots
    Assaid, E
    Feddi, E
    El Khamkhami, J
    Dujardin, F
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (02) : 175 - 184
  • [7] Shapes of InAs quantum dots on InGaAs/InP
    Hwang, H
    Yoon, S
    Kwon, H
    Yoon, E
    Kim, HS
    Lee, JY
    Cho, B
    APPLIED PHYSICS LETTERS, 2004, 85 (26) : 6383 - 6385
  • [8] Tunable emission from InAs quantum dots on InP nanotemplates
    Lefebvre, J
    Poole, PJ
    Aers, GC
    Chithrani, D
    Williams, RL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2173 - 2176
  • [9] Electron microscopy and optical spectroscopy of single InAs/InP quantum dots
    Chithrani, D.
    Perovic, D. D.
    Williams, R. L.
    Lefebvre, J.
    Poole, P. J.
    Aers, G. C.
    Microscopy of Semiconducting Materials, 2005, 107 : 247 - 250
  • [10] Single electron charging in deterministically positioned InAs/InP quantum dots
    Reimer, M. E.
    Dalacu, D.
    Lapointe, J.
    Poole, P. J.
    Kim, D.
    Aers, G. C.
    McKinnon, W. R.
    Williams, R. L.
    APPLIED PHYSICS LETTERS, 2009, 94 (01)
12345