Wavelength controlled InAs/InP quantum dots for telecom laser applications

被引：7

作者：

Anantathanasarn, S. ^{[1
]}

Notzel, R. ^{[1
]}

van Veldhoven, P. J. ^{[1
]}

van Otten, F. W. M. ^{[1
]}

Barbarin, Y. ^{[1
]}

Servanton, G. ^{[1
]}

de Vries, T. ^{[1
]}

Smalbrugge, E. ^{[1
]}

Geluk, E. J. ^{[1
]}

Eijkemans, T. J. ^{[1
]}

Bente, E. A. J. M. ^{[1
]}

Oei, Y. S. ^{[1
]}

Smit, M. K. ^{[1
]}

Wolter, J. H. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Interuniv Res Inst Commun Technol, eiTT COBRA, NL-5600 MB Eindhoven, Netherlands

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 12期

关键词：

InAs; InGaAsP; InP (100); quantum dot; metalorganic vapor-phase epitaxy; laser;

D O I：

10.1016/j.mejo.2006.05.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (100) over the 1.55-mu m region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interlayers, together with reduced growth temperature and V/III ratio, and extended growth interruption suppress As/P exchange to reduce the QD height in a controlled way. Device quality of the QDs is demonstrated by temperature-dependent photoluminescence (PL) measurements, revealing zero-dimensional carrier confinement and defect-free InAs QDs, and is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers, exhibiting a broad gain spectrum. Unpolarized PL from the cleaved side, important for realization of polarization insensitive semiconductor optical amplifiers, is obtained from closely stacked QDs due to vertical electronic coupling. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1461 / 1467

页数：7

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