Capacitance spectroscopy of InAs/GaAs quantum dots structures

被引：0
|
作者：
Chiquito, AJ [1 ]
Pusep, YA [1 ]
Mergulhao, S [1 ]
Galzerani, JC [1 ]
Moshegov, NT [1 ]
机构：
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The application of the usual expressions to calculate the CV profiles in samples with quantum dots gives erroneous results, mainly due to the presence of the characteristic negative differential capacitance of a system with dimensionality lower than 2. We developed a simple electrostatic model to calculate the CV profiles in these systems, and we applied it to a sample with an InAs self-assembled quantum dots system. The model was further used to study the effects of holes in the capacitance of quantum dots under illumination.
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页码：1099 / 1100
页数：2
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