Capacitance spectroscopy of InAs self-assembled quantum dots embedded in a GaAs/AlAs superlattice

被引：18
|
作者：
Chiquito, AJ
Pusep, YA
Mergulhao, S
Galzerani, JC
Moshegov, NT
Miller, DL
机构：
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil
[2] Penn State Univ, University Pk, PA 16802 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 04期
关键词：
D O I：
10.1063/1.1305554
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristics of the InAs self-assembled quantum dots embedded both in a GaAs bulk matrix and in a GaAs/AlAs superlattice were investigated. Evidences of electrons confinement inside the InAs quantum dots were obtained using both capacitance-voltage measurements and Raman spectroscopy. A much stronger electron localization was detected for the quantum dots embedded in the superlattice in comparison with those embedded in bulk GaAs. As a consequence, the electrical characteristics of the structures with quantum dots grown in superlattices were found to be significantly thermo-stabilized. The origins of these effects are discussed in connection with the differences between the electronic features of the two kinds of structures. (C) 2000 American Institute of Physics. [S0021-8979(00)01116-6].
引用
收藏
页码：1987 / 1991
页数：5
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