Capacitance spectroscopy of electron energy levels in InAs quantum dots in a GaAs matrix

被引：0
|
作者：
Brunkov, PN
Konnikov, SG
Ustinov, VM
Zhukov, AE
Egorov, AY
Maksimov, MV
Ledentsov, NN
Kopev, PS
机构：
来源：
SEMICONDUCTORS | 1996年 / 30卷 / 05期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study has been made of temperature dependence of the capacitance-voltage characteristics of Schottky barriers on n-GaAs epitaxial layers containing a layer of InAs quantum dots. A model, based on the solution of Poisson's equation, for calculating the capacitance-voltage characteristics is proposed. This model makes it possible to determine the basic parameters of the quantum dots: the distance from the layer of quantum dots to the surface of the sample, the density of quantum dots, and the energy position of an electron level in a quantum dot. A rather good agreement with the photoluminescence and transmission electron microscopy data is observed. The temperature dependence of the threshold current density of a quantum dot laser is explained. (C) 1996 American Institute of Physics.
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页码：492 / 496
页数：5
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