CALCULATION OF THE ENERGY-LEVELS IN INAS/GAAS QUANTUM DOTS

被引：232
|
作者：
MARZIN, JY [1 ]
BASTARD, G [1 ]
机构：
[1] ECOLE NORMALE SUPER, PHYS MAT CONDENSEE LAB, F-75005 PARIS, FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 05期
关键词：
A; SEMICONDUCTORS; NANOSTRUCTURES; D; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES;
D O I：
10.1016/0038-1098(94)90524-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a detailed effective mass calculation of the energy levels,in InAs quantum dots embedded in GaAs. We compare the results of a separable approximate treatment with a more complete numerical approach. A satisfying;agreement is found with the available experimental data. Even for dot diameters of the order of 30 nm, we find large- distances between consecutive energy-levels, which should play an important role in the energy relaxation rates.
引用
收藏
页码：437 / 442
页数：6
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